摘要
采用微波等离子体化学气相沉淀法合成了单晶金刚石膜,探索了化学气相沉淀法(CVD)单晶金刚石膜的生长机理。实验仪器采用石英管式微波等离子体化学气相沉积装置,种晶为3颗IaAB型天然金刚石原石,生长面近平行于(111)和(110)方向,生长温度为800℃,压力约为6 kPa,时间约为8 h。使用宝石显微镜和环境扫描电子显微镜观察分析了CVD单晶金刚石膜的生长表面形貌。结果表明,在生长面上可见明显的生长层,生长晶体无色透明,CVD单晶金刚石膜在生长面上横向外延生长,并形成定向的台阶状表面——"阶梯流"。在相同的条件下,(111)方向上生长的CVD单晶金刚石膜比(110)方向上的更有序。H2浓度的大小对CVD单晶金刚石膜的质量有影响。
The single-crystal diamond films are grown by the microwave plasma chemical vapor deposition method, as well as the growth mechanism is studied. The experiments are performed in a quartz chamber microwave plasma chemical vapor deposition reactor. Three natural IaAB-type diamond substrates are nearly parallel to （111）- and （110）-oriented. The growth temperature is 800℃,the pressure is about 6 kPa and the growth time is about 8 hours. The surface morphologies of CVD single-crystal diamond films are observed and analysed by microscope and ESEM, which show the lateral growth forming the step-bunched surface--＂step-flow＂. The CVD single-crystal diamond films are colourless and transparent. Under the same condition, CVD single-crystal diamond films grown on （111） direction show more orderly than that on （110）. Moreover, the hydrogen concentration could influence the quality of CVD single-crystal diamond films.
出处
《宝石和宝石学杂志》
CAS
2009年第2期11-14,共4页
Journal of Gems & Gemmology
关键词
化学气相沉淀法
单晶金刚石膜
表面形貌
横向生长
chemical vapor deposition
single-crystal diamond film
surface morphology
lateral growth
