摘要
本文基于一个伴随ＬＯ声子发射的光激发电子被重新俘获的物理模型，采用ＭｏｎｔｅＣａｒｌｏ方法，对掺施主杂质的半导体光电导谱中与ＬＯ声子相对应的反对称谱峰结构进行了理论模拟，并与Ｓｉ掺杂的ＧａＡｓ及ＩｎＰ的实验结果作了比较．
Abstract Based on the physical model of the photoexcited electrons being recaptured by the ground state of the hydrogenic donors when a LO phonon is emitted, Monte Carlo simulation of the asymmetric photoconductivity structure situated at the energy position of LO phonon in shallow donor doped semiconductors is reported in this paper. The good agreement between the theoretical result and the experimental data of Si doped GaAs and InP indicates that our model is reliable.
关键词
LO声子
掺杂
半导体
光电导响应
Doping (additives)
Monte Carlo methods
Phonons
Silicon
