摘要
采用真空蒸镀法在Si(111)基板上制备了ZnS光学薄膜,并系统研究了蒸发温度、沉积时间、基板距蒸发源的位置等因素对所制备薄膜物相及显微结构的影响。用X-射线衍射(XRD)、原子力显微镜(AFM)对制备的薄膜进行了表征。结果表明:制备薄膜的物相主要以β-ZnS闪锌矿(Sphalerite)为主,并有少量的α-ZnS纤锌矿(Wurtzite),薄膜具有(111)结晶取向的生长特征。当沉积温度为1200℃时,所制备薄膜的结晶性能较好,随沉积时间延长,薄膜的结晶性能降低。
ZnS thin films were prepared on Si（111） substrate using a vacuum evaporation process. The factors of preparing the thin film such as evaporation temperature, deposition time and the distance between substrate and evaporation source were systematically studied. Samples as-prepared were characterized by X-ray diffraction （XRD） and atomic force microscopy （AFM）. Results show that the structure of prepared ZnS thin film is composited mainly of β-ZnS （Sphalerite） and a little amount of α-ZnS （Wurtzite）; the deposited thin film has an obvious crystal orientation along （11 l） direction; at the temperature of 1200 ℃, films with good crystalline performance were obtained; with the evaporation time prolonging the crystallization performance of ZnS thin films decreased.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2009年第A01期490-492,共3页
Rare Metal Materials and Engineering
基金
教育部新世纪优秀人才支持计划(NETC-06-0893)
陕西科技大学研究生创新基金
关键词
ZNS薄膜
真空蒸镀法
蒸发温度
ZnS thin film
vacuum evaporation
evaporation temperature
