摘要
利用微细加工技术在单晶LaB6材料上制备出了场发射二极管阴极阵列。具体工作是结合半导体工艺,采用薄膜沉积、涂胶、曝光、显影、刻蚀以及电化学腐蚀等一系列工序制备出了性能良好的尖锥阵列。工作的重点是覆有掩膜层单晶LaB6材料的电化学腐蚀,通过大量实验摸索出了最佳的工艺参数(包括电解液类型及浓度、电解电流、电解时间等),得到了具有一定表面形貌及阵列高度且底面平整度良好的场发射阴极阵列。
Field emission diode arrays on the single crystal LaB6 materials were fabricated by micromachining technologies. A series of processes of semiconductor technologies including deposition, coating, exposure, development, etching and electrochemical corrosion were introduced to fabricate field emitter arrays with good performances. The key point was the electrochemical corrosion of single crystal LaB6 materials coated with mask layers. A large number of experiments were made to find out the optimal technology parameters, including the type and deepness of electrolyte, the current of electrolyze, the time of electrolyze, etc. And then, the field emitter arrays with good surface appearance, height and roughness were obtained.
出处
《电子器件》
CAS
2009年第2期277-280,共4页
Chinese Journal of Electron Devices
关键词
LaB6
场发射阴极阵列
半导体工艺
电化学腐蚀
LaB6
filed emitter arrays
semiconductor technologies
electrochemical corrosion
