摘要
利用TSMC0.18μm CMOS工艺设计了一块LDD(Laser DiodeDriver)电路,该LDD设计工作频率为15Gb/s,电路采用直接耦合的两级差分放大器结构,其中运用并联峰化技术和放大器直接耦合技术以扩展带宽,后仿真结果显示该电路可工作在15Gb/s,输出电压双端峰峰值可达3.3V。
Using TSMC 0.18μm CMOS process, a LDD is designed. Working at 15Gb/s and, this LDD uses shunt peaking to broaden bandwidth, and the circuit has two stage difference amplifier by direct coupling. The simulation result shows ,working at 15Gb/s,the circuit can supply a peak-peak voltage of 3.3V.
出处
《仪器仪表用户》
2009年第3期73-74,共2页
Instrumentation
