摘要
本文采用模型固体理论计算了In1-xGaxAsyP1-y/GaAs应变量子阱中电子和空穴的能带结构,研究了组分对能带的调制作用.结果表明,In1-xGaxAsyP1-y/GaAs量子阱的能带类型及带隙依赖于阱材料In1-xGaxAsyP1-y的组分。当y=1.0,x在0~1.0范围时,量子阱In1-xGaxAsyP1-y/GaAs的能带为类型Ⅰ;当y=0.6,x在0.32~1.0范围时,量子阱的能带为类型Ⅱ。即通过调整阱材料组分,可以方便实现这种量子阱的能带转型（即类型I-类型Ⅱ的转变）。
The band profiles of In1-xGaxAsyP1-y single quantum wells confined by GaAs barriers are investigated using the model solid theory under considering the effect of strain. The band lineups for electrons and holes are tuned by changing Ga concentration x and As concentration y in the well. The results indicate that type of band alignment and energy gaps depend on quantum-well compositions. In1-x GaxAsyP1-y （y= 1. 0, x ： 0- 1. 0） quantum wells with GaAs barriers show type-Ⅰ band alignment, while In1-xGaxAsyP1-y （y=0. 6, x ： 0. 32-1. 0） quantum wells with GaAs barriers exhibit a type- Ⅱ band lineup. So the variety of concentration can expediently carry out type-Ⅰ to type-Ⅱ transition for In1-x GaxAsyP1-y quantum wells with GaAs barriers.
出处
《信息记录材料》
2009年第2期3-8,共6页
Information Recording Materials
基金
国家自然科学基金资助项目(10765003)
内蒙古师范大学研究生科研创新基金资助项目(YJS07021)
关键词
四元混晶
量子阱
组分
能带
应变
quaternary mixed crystal
quantum wells
composition
band lineups
strained
