5Ministry of Defense of the UK. Safe Operating limits for back driving[ R]. INT DEF STAN 00 -53/1. 被引量：1
6JEP122B : Failure Mechanisms and Models for Semiconductor Device [ S ]. JEDEC Solid State Technology Assciation,2003. 被引量：1
7Loh E. Physical analysis of data on fused-open bond wires [ J]. IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1983,6 (2) :209 - 217. 被引量：1
8NASA Langley Research Center. Abnormal Fauh-Recovery Characteristics of the Fault - Tolerant Multiprocessor Uncovered Using a New Fault-Injection Methodology [ R ]. NASA - TM - 4218,1991. 被引量：1
9Nobauer G T, Moser H. Analytical approach to temperature evaluation in bonding wires and calculation of allowable current [ J ]. IEEE Transactions on Advance Packaging,2000,23 (3) :426 -435. 被引量：1
10M.-C. Hsueh, T. K. Tsai, and R. K. Iyer, "Fault injection techniques and tools," IEEE Comput., vol. 30, no. 4, pp. 75 - 82, 1997. 被引量：1
