摘要
本文用单源共蒸发生长获得了CuInSe_2薄膜,具有黄铜矿结构和(112)取向。膜衬底为玻璃,衬底温度Ts=200℃。研究了膜的结构、组分和导电类型等。
In this paper, we have been obtained CuInSe_2 thin films by single source co-evaporation growth. It has chalcopyrite structure and (112) oriention. Substrates of film is glass, temperature Ts = 200℃. We have studied film structure, composition and conductivity type etc.
出处
《云南师范大学学报（自然科学版）》
1989年第2期57-59,共3页
Journal of Yunnan Normal University:Natural Sciences Edition
