Study on Photoluminescence fromC^+ Ion Implanted SiO_2 Films
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1Raman Spectra Study of Photolunimescence of C-ion Implanted Si and SiO_2 Samples[J].IMP & HIRFL Annual Report,1998(0):131-131.
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2李杰,王育华,董其铮,刘吉地.Photoluminescence properties of Y_(0.75-x)Gd_xAl_(0.10)BO_3:Eu_(0.10)^(3+),0.05R^(3+)(R= Sc,Bi) (0.00 ≤ x ≤ 0.45)[J].Chinese Physics B,2010,19(6):248-253.
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3Raman Study of C_(60 )films Irradiated with 171.2MeVS^(9+)Ions[J].IMP & HIRFL Annual Report,1997(0):57-58.
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4梁栋,贾吉慧,廖建珍,余荣民,卢灿忠.Synthesis,Crystal Structure and Photoluminescence of a TADF Cuprous Complex[J].Chinese Journal of Structural Chemistry,2017,36(1):82-88. 被引量：1
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5窦刚,于洋,郭梅,张玉曼,孙钊,李玉霞.Memristive Behavior Based on Ba-Doped SrTiO3 Films[J].Chinese Physics Letters,2017,34(3):126-129. 被引量：1
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6Defectsin SiO_2 Glass Irradiated with High Energy Ar Ion[J].IMP & HIRFL Annual Report,1997(0):65-66.
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7XPS Study of SiO_2 Glass Irradiate dwith 1.15Ge V Ar Ion[J].IMP & HIRFL Annual Report,1997(0):68-69.
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8XPS Study of Crystal line SiO_2 Irradiated with 1.15Ge V Ar Ion[J].IMP & HIRFL Annual Report,1997(0):69-70.
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9Formation Behaviorof Bubblesin 316L and Low-activation FeCr Mn Alloy Implanted with 2 .5Me V He Ions[J].IMP & HIRFL Annual Report,1997(0):139-139.
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10EPR Study of SiO_2 Glass Irradiated with High Energy Ar Ion[J].IMP & HIRFL Annual Report,1997(0):67-67.
