Positron Lifetime Study of Defectsin Silicon Irradiated with 750 Me V Ar Ions

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出处《IMP & HIRFL Annual Report》 1997年第0期62-63,共2页 中国科学院近代物理研究所和兰州重离子研究装置年报（英文版）

基金 SupportedpartlybytheChinaPostdoctoralScienceFoundationandtheChineseAcademyofSciences.

分类号 O571 [理学—粒子物理与原子核物理]

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IMP & HIRFL Annual Report

1997年第0期

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Positron Lifetime Study of Defectsin Silicon Irradiated with 750 Me V Ar Ions

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