摘要
采用SiO2-C还原法在电阻炉内生产碳化硅,由于工艺条件波动和反应不充分,碳化硅中会形成杂质,这些杂质以Si和SiO2为主。研究了从气流磨加工所得的碳化硅微粉中去除Si和SiO2,考察了碱液质量浓度、液固质量比、温度和时间对杂质浸出的影响。条件试验及正交试验结果表明:在碱质量浓度为150g/L、液固质量比为4∶1、温度为70℃条件下浸出4h,Si和SiO2去除率达90%以上,除杂效果明显。
By SiO2-C reduction method to produce silicon carbide in the resistance furnace,because the process conditions fluctuation and the reaction insufficiency,there are some impurities in the silicon carbide.These impurities are mainly Si and SiO2.Remove of the Si and SiO2 from the silicon carbide micro powder processed by airflow mill has been studied.The effects of alkali concentration、mass ratio of liquid to solid、temperature and time on impurities removal have bee examined.The condition test results showed that under the optimal conditions of alkali concentration of 150 g/L,mass ratio of liquid to solid of 4∶1,temperature of 70 ℃ and reaction time of 4 hours,the leaching rate of Si and SiO2 was more than 90%,the effect of impurities removal is good.
出处
《湿法冶金》
CAS
北大核心
2012年第5期309-311,共3页
Hydrometallurgy of China
基金
攀枝花市产业推进项目基金资助项目(2011CY-S-18)
关键词
碳化硅
微粉
氢氧化钠
杂质
去除
silicon carbide
micro powder
sodium hydroxide
impurity
removal
