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Al箔溅射沉积Cu膜的工艺研究 被引量:4

Study on the Technology of Cu Film Deposited on Al Foil using Magnetron Sputtering
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摘要 为了研究溅射工艺对膜-基间结合力的影响,获得成本较低、膜-基间结合较好的表层导电薄膜电磁屏蔽材料,利用磁控溅射镀膜方法在Al箔基体上溅射沉积Cu膜,采用胶粘带拉剥法测试了膜-基间的结合力,使用扫描电子显微镜观察了Cu膜的组织和Al/Cu的界面形貌。结果表明:溅射工艺对膜-基间的结合力有着明显的影响,镀Cu前对Al箔进行反溅射和在溅射沉积过程中对工件施加负偏压都可有效地提高膜-基间的结合力。分析认为:镀Cu前反溅射可有效地去除Al箔表面的氧化膜,使Al箔表面得到净化;在磁控溅射沉积过程中对工件施加较高负偏压将产生辉光放电,使工艺转化成溅射离子镀,从而获得与基体结合良好、晶粒细小、致密的镀层。 In order to study the effect of the sputtering process on the adhesion of film on the substrate and obtain the surface conductive electromagnetic shielding materials that possess a lower cost and better adhesion, Cu film was prepared on A1 foil using magnetron sputtering. The adhesion of film on the substrate was measured with the adhesive tape pulling and stripper method. The microstructure of Cu film and the Al/Cu interface morphology were observed using the scanning electron microscopy. The results show that the adhesion of film on the substrate is influenced obviously by the sputtering process. Both ions bombardment on the substrate ( Al foil) before the Cu fihn depositing and the bias voltage acted to the substrate during magnetron sputtering can improve the adhesion of film on the substrate availably. The analysis indicates that ions bombardment on the substrate before the Cu film depositing can remove the oxide film from the surface of Al foil effectively, thereby the surface is cleaned. During magnetron sputtering, the higher bias voltage acted to substrate is able to induce a glow discharge and form magnetron sputtering ion plating, so as to obtain the compact film that possess better adhesion and finer crystal grains.
出处 《表面技术》 EI CAS CSCD 北大核心 2009年第2期49-51,共3页 Surface Technology
基金 山东省自然科学基金资助项目(Y2007F42)
关键词 电磁屏蔽 磁控溅射 Al箔 CU膜 负偏压 结合力 Electro-magnetic interference Magnetron sputtering Al foil Cu film Bias voltage Adhesion
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