摘要
高频放电氮气等离子体表面处理纳米碳化硅粉体,进而在碳化硅表面上引发甲基丙烯酸甲酯单体接枝聚合,在纳米碳化硅表面形成一层保护膜.红外(FTIR),X射线光电子能谱(XPS)以及热失重分析(TGA)测试表明该聚合膜是通过化学键连接在碳化硅表面的,X射线衍射光谱(XRD)表明经等离子体处理改性的碳化硅粉体只是其表面性质发生了改变,其晶体结构并没有发生任何变化.
Poly（ methyl methacrylate） （PMMA） grafted onto nano - SiC particles is our experiment, the grafting polymerization reaction is induced by high frequency investigated in this study. discharge N2 plasma treatment of the nanosized powder. FTIR.XPS and TGA results show that PMMA is grafted onto the surfaces of silicon carbide powder, and crystal structure of the silicon carbide powder observed with XRD spectra was unchanged before and after plasma graft polymerization.
出处
《材料科学与工艺》
EI
CAS
CSCD
北大核心
2009年第1期105-109,共5页
Materials Science and Technology
