摘要
采用磁控溅射方法,在玻璃基片上制备V掺杂非晶态TiO2薄膜,研究了射频掺杂功率、基片温度以及薄膜厚度等因素对薄膜光催化性能的影响。X射线衍射(XRD)及X光电子能谱(XPS)分析表明:薄膜为非晶态,薄膜主要成分为钛(Ti)和钒(V),其比例为8.7∶1。光催化降解10mg/L的亚甲基蓝溶液实验表明:随着薄膜厚度的增加,光催化降解率递增,当厚度达129nm时,薄膜对亚甲基蓝的降解率为83.36%。
The vanadium-doped titanium dioxide （TiO2） thin films were deposited by magnetron sputtering on glass and silicon substrates. The influence of the film growth conditions, including RF power and substrate temperature, and the films thickness, on the photo-degradation of methylene blue was studied. The V-doped TiO2 films were characterized with X-ray diffraction （XRD） and X-ray photoelectron spectroscopy （XPS）. The results show that the surface of the amorphous films consists mainly of Ti and V with proportion of 8.7：1. and that as the film thickness increases, its photo-degradation rate increases in the test of the photo-degraded methylene blue （10mg/L）. At a film thickness of 129nm, the photo-degradation rate was found to be 83.36%.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2009年第2期209-212,共4页
Chinese Journal of Vacuum Science and Technology
