摘要
以NSR1755i7A型投影曝光机为基础,分析了影响大面积精细光刻图形分辨率的主要因素。利用表面平坦化技术、BARC工艺技术和PEB工艺技术,解决了高分辨率和聚焦深度的矛盾,消除了曝光过程中出现的表面反射和因驻波造成曝光图形边缘罗纹状的现象,实现了大面积(17.5mm×17.5mm)、高长宽比(160)、高密集(占空比36%)、高分辨率亚微米(0.5μm)精细线条光刻。同时提出了采用两次曝光技术在NSR1755i7A型投影曝光机上实现了厚胶高分辨率图形的制作。
Based on the NSR1755i7A stepper, some main factors which affect resolution of large proportion fine pattern were analyzed in this paper. The contradiction of high resolution and DOF, bottom reflection, and spiral shape of photo-resist bar sidewall induced by stop wave were resolved and eliminated by use of surface planarization, BARC, and PEB technology. Large area （17.5 mm × 17.5 mm）, high ratio of length to width（160）, high density（duty cycle 36%）, and high resolution submicron（0.5um） fine pattern technology were realized. Double exposure technology was proposed to realize thick photo-resist high resolution pattern on NSR1755i7A stepper.
出处
《电子工业专用设备》
2009年第3期11-14,共4页
Equipment for Electronic Products Manufacturing
