摘要
介绍了一种新的发光二极管（LED）芯片的检测方法及应用。该方法利用自行研制的掩埋双pn结（BDJ）光波长探测器同时测量LED芯片的有效波长及辐射强度，具有简单、快捷、动态范围宽、探测器体积小和便于系统集成的优点，在半导体照明最感兴趣的398～780nm波长范围内，波长测量的重复精度及分辨率优于1nm。据此方法，对红、绿、蓝、紫四种LED芯片发光的波长及辐射强度进行了实际测量，对红绿蓝三基色发光二极管合成白光的偏色进行了检测，并与光纤光谱仪测量得到的结果进行了比较。
Large amounts of LED chips need to be tested in solid state lighting. As conventional methods, two light paths are set to obtain LED chips＇ power and color parameters separately. In this thesis, a simpler and faster method based on BDJ photo-detector is proposed to test LED chip＇s optical parameters. The BDJ photo-detector, mainly designed and fabricated for applications in solid state lighting, can measure LED chips＇ light intensity and centroid wavelength simultaneously in the wavelength range of 380-780 nm with the accuracy of 1 nm. It can also be used to monitor the white balance of the light combined with RGB element LEDs.
出处
《半导体光电》
CAS
CSCD
北大核心
2009年第1期90-94,共5页
Semiconductor Optoelectronics
