摘要
采用磁控溅射工艺在石英、云母与Ti/Si衬底上制备100 nm厚Cu膜,并在300℃条件下进行原位退火。用原子力显微镜(AFM)观察薄膜表面形貌,基于粗糙度方法与分形理论对其量化表征。结果表明:分形维数Df比粗糙度Rrms更能准确地表征薄膜表面几何形态;石英衬底上Cu膜具有较为复杂的表面结构,其Df值大于沉积在云母和Ti/Si衬底上薄膜的;经过退火处理后,所有薄膜的表面形貌均趋于平滑化,Df值减小。
100 nm-thick Cu films were deposited on quartz, mica, and Ti/Si substrates by magnetron sputtering technology. Film surface morphologies were obtained by atomic force microscope and then analyzed in terms of surface roughness method and fractal theory. In comparison with surface roughness Rrms, fractal dimension Df can accurately characterize film surface morphology. The films grown on quartz have significantly larger D1 than those grown on mica, or Ti/Si. Annealing of the films at 300℃ reduces the values of Dr. The dependence of surface morphology on various substrates was discussed in terms of interfacial reaction, lattice mismatch, and surface energy.
出处
《半导体光电》
CAS
CSCD
北大核心
2009年第1期67-70,74,共5页
Semiconductor Optoelectronics
关键词
铜膜
表面形貌
分形
衬底
Cu film
surface morphology
fractal
substrate
