摘要
利用共辐照法将４（甲基丙烯酸）２，２，６，６四甲基哌啶醇酯（ＴＭＰＭ）接枝共聚在聚丙烯上。研究不同条件对接枝率的影响。研究表明在苯、四氯化碳和石油醚等溶剂中接枝率比在其它溶剂中要高；在氩气中辐照的接枝率比在空气中的高。在苯中，接枝率在１０～６０ｋＧｙ的范围内呈线性增长，大于６０ｋＧｙ出现偏低；在ＣＣｌ４中，接枝率在１０～５０ｋＧｙ的范围内呈线性增长，大于５０ｋＧｙ出现偏低。在０～２．８５ｍｏｌ／Ｌ的浓度范围内接枝率随单体浓度的增加而增加，只有在浓度低于１１４ｍｏｌ／Ｌ时接枝率随浓度增长较快。添加阻聚剂的样品接枝率比不添加阻聚剂的低，在低剂量时相差较大，随着剂量的增大，这种差别越来越小。研究接枝ＴＭＰＭ对聚丙烯耐辐射稳定性能的影响，发现添加接枝共聚物的聚丙烯比添加未接枝的ＴＭＰＭ的聚丙烯更耐辐射。
The gamma radiation induced graft copolymerization of 2,2,6,6 tetramethyl 4 piperidinyl methacrylate (TMPM), a very effective hindered amine light stabilizer (HALS), onto polypropylene was investigated by simultaneous irradiation technique. The effects of various synthesis conditions on the graft content were studied. It was shown that percent grafting in benzene, CCl 4 and petroleum ether were higher than that in other solvents. The percent grafting was higher when graft copolymerization was carried out in argon atmosphere than that in air. For the grafting copolymerization carried out in benzene, percent grafting increased linearly from 10 to 60 kGy and beyond 60 kGy a tendency to level off was appeared. In CCl 4, percent grafting increased linearly from 10 to 50 kGy and beyond 50 kGy a tendency to level off was appeared. Percent grafting also increased continuously with increasing monomer concentration up to 2.85mol/L, but significant increase was observed only up to 1 14 mol/L. The percent grafting decreased when inhibitor was used, the difference of percent grafting between the samples with and without inhibitor became smaller with the increase of irradiation dose. The stabilizing effectiveness of grafted TMPM on the radiation resistance of Polypropylene was found to be better than that of TMPM monomer.
出处
《辐射研究与辐射工艺学报》
CAS
CSCD
北大核心
1998年第1期5-9,共5页
Journal of Radiation Research and Radiation Processing
关键词
辐射接枝
聚丙烯
受阻胺光稳定剂
TMPM
Radiation induced grafting
Polypropylene
Hindered amine light stabilizer (HALS)
