摘要
Green InGaN/GaN based light-emitting diodes （LEDs） are fabricated both on planar and wet-etched patterned sapphire substrates by metalorganic vapour phase epitaxy （MOVPE）. Their photoluminescence （PL） properties of the two samples are studied. The results indicate that the PL integral intensity of the green LED on the patterned substrate is nearly two times of that on the planar one within the whole measured temperature range. The enhanced PL intensity in the green LED on the patterned substrate is shown completely contributed from the extraction efficiency, but not from the internal quantum efficiency. The conclusion is supported by temperature-dependent PL analysis on the two samples, and the mechanisms axe discussed.
Green InGaN/GaN based light-emitting diodes （LEDs） are fabricated both on planar and wet-etched patterned sapphire substrates by metalorganic vapour phase epitaxy （MOVPE）. Their photoluminescence （PL） properties of the two samples are studied. The results indicate that the PL integral intensity of the green LED on the patterned substrate is nearly two times of that on the planar one within the whole measured temperature range. The enhanced PL intensity in the green LED on the patterned substrate is shown completely contributed from the extraction efficiency, but not from the internal quantum efficiency. The conclusion is supported by temperature-dependent PL analysis on the two samples, and the mechanisms axe discussed.
基金
Supported by the National Natural Science Foundation of China under Grant No 10574148, the National High-Technology Research and Development Programme of China under Grant Nos 2006AA03A106 and 2006AA03A107, and National Basic Research Program of China under Grant No 2006CB921300.
