摘要
用十八烷基三氯硅烷(OTS)修饰了不同厚度的酞菁铜(CuPc)有机薄膜晶体管器件,对比酞菁铜厚度为15、40、80nm的3种器件性能后,得到40nm的酞菁铜器件具有最高载流子迁移率。分析了OTS修饰的绝缘层表面对器件性能的影响,得到的40nm厚度酞菁铜器件载流子迁移率为4.3×10-3cm2/V.s,阈值电压为-9.5V。
Organic thin film transistors （OTFTs） were modified by silane coupling agents- octadecyltrichlo- rosilane （OTS） with different thicknesses of CuPc. Comparing with different thicknesses of CuPc layer of 15 nm,40 nm and 80 nm, the 40 nm CuPc devices have the best performance on mobility. The performance of OTFTs that were modified by OTS has been investigated. Electrical parameters such as carrier mobility and threshold voltage by field effect measurement have been calculated. For OTFT based on the 40 nm CuPc, the field-effect mobility is 4.3 × 10^-3 cm^2/V · s and threshold voltage is --9.5 V.
出处
《液晶与显示》
CAS
CSCD
北大核心
2009年第1期66-70,共5页
Chinese Journal of Liquid Crystals and Displays
基金
大连交通大学博士启动基金
