摘要
现代CMOS工艺的发展使得在CMOS工艺上设计射频IC前端成为可能。但在传统CMOS工艺集成的片上螺旋电感品质因数(Q)偏低,大大影响其性能。通过引入负电导实现螺旋电感Q值提升,并将其应用于共栅低噪声放大器的设计。
In this paper, a 1.9GHz low noise amplifier is presented here. The common gate topology is adapted to lower supply voltage and power consumption. And the Q enhancement circuit is added to reduce the parasitic of resistance of spiral inductor. Using this method, the performance of LNA can be upgraded a lot.
出处
《软件导刊》
2009年第2期100-102,共3页
Software Guide
关键词
低噪放
品质因数
负电导
共栅
Low Noise Amplifier
Common Gate
Quality Factor
Negative Conductance.
