摘要
采用化学气相沉积(CVD)技术,以高温高压(HTHP)合成的(100)金刚石和p型(100)Si为衬底制备了硫掺杂和硼-硫共掺杂金刚石薄膜,利用原子力显微镜(AFM)、扫描隧道显微镜(STM)及隧道电流谱(CITS)等手段分析同质和异质外延CVD掺杂金刚石薄膜的结构和性能.结果表明:异质Si衬底上CVD金刚石的形核密度低,薄膜表面比较粗糙,粗糙度达到18.5nm;同质HTHP金刚石衬底上CVD金刚石薄膜晶粒尺寸约为10—50nm,表面平整,表面粗糙度为1.8nm.拉曼测试和电阻测量的结果显示,在HTHP金刚石衬底上制备的金刚石薄膜晶格完整性更好,薄膜中的缺陷浓度及应力比Si衬底上合成的金刚石薄膜中的低,薄膜的导电性能也高于在Si衬底上制备的金刚石薄膜.扫描隧道电流谱(CITS)测试结果显示,Si衬底上制备的金刚石薄膜晶界处及晶界附近的晶粒表面为高电子发射区,而在HTHP金刚石上制备的金刚石薄膜表面电流分布较均匀;电流-电压(I-V)特性表明在Si和HTHP金刚石衬底制备的硫掺杂金刚石薄膜均具有n型导电结构特征.
Sulphur-doped and boron-sulphur co-doped diamond thin films were prepared by using chemical vapour deposition on p-type Si （100） and HTHP-diamond （100） substrates. The structures and properties of CVD diamond films were investigated with atom force microscope （AFM）, Raman spectrum, sanning tunneling microscopy （STM） and current imaging tunneling current spectroscopy （CITS）. Comparing the structures and properties of the doped diamond films grown on Si and HTHP diamond substrates, we find that the films deposited on Si substrates are composed of spherical grains with size of one hundred nanometer, the doped diamond films on Si substrates consist of large grains with a high fraction of grain boundaries due to the successive secondary nucleation,and the roughness of the films is estimated to be around 18.5 nm. The doped diamond films on HTHP diamond substrates are composed of nanometer crystal grains with the sizes of 10—50 nm and the film surface is flat with the roughness estimated to be around 1.8 nm. Raman and resistivity measurements reveal that the films deposited on HTHP diamond substrates have much higher quality, fewer defects and lower stress, and higher conductivity than the films grown on Si substrates. Current imaging tunnelling current spectroscopy （CITS） images indicate that some grain boundaries and crystalline facets near the grain boundaries are the high electron emission regions. However, the grain boundaries and crystalline facets of the doped diamond films on HTHP diamond substrates have uniform electron emission currents, which indicates that the doped atoms are uniformly distributed in that films. The local I-V characteristics for films deposited on Si or HTHP diamond substrates indicate the n-type conduction.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2009年第2期1287-1292,共6页
Acta Physica Sinica
基金
上海市教委科研创新项目(批准号:09YZ482)
上海市重点学科资助的课题~~
关键词
金刚石
掺杂
外延
diamond, doping, epitaxy
