摘要
基于SMIC 0.18μm工艺设计了一种低噪声的四管像素结构.通过在像素内增加传输管和存储节点实现了相关双采样,可同时消除固定模式噪声和随机噪声;采用Pinned光电二极管技术大幅降低了表面暗电流.所设计像素尺寸为3.6μm×3.6μm,并将其应用于一款648×488像素阵列CMOS图像传感器,经流片测试,图像传感器信噪比可达42 dB,在25℃下表面暗电流为25 mV/s(转换成电压表示的).所设计的四管Pinned光电二极管像素结构相对于传统三管像素结构,具有较低的噪声和暗电流.
A low noise four transistor pixel structure was designed based on SMIC 0.18μm process. By adding transfer gate and storage node, correlated double sampling was realized and fixed pattern noise could random noise could be eliminated. Surface dark current was remarkably reduced by introducing Pinned photodiode technique. The pixel pitch is 3.6μm×3.6μm, which was used in a 648×488 pixel array CMOS image sensor. Test result shows that SNR of image sensor is 42 dB and surface dark current is 25 mV/s at 25℃. Compared with traditional three transistor pixel, the four transistor Pinned photodiode pixel has lower noise and lower dark current.
出处
《天津大学学报》
EI
CAS
CSCD
北大核心
2009年第2期149-152,共4页
Journal of Tianjin University(Science and Technology)
基金
国家自然科学基金资助项目(60576025)
天津市科技创新专项基金资助项目(05FZZDGX00200)
