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稀土Nd掺杂Ba0.65Sr0.35TiO3薄膜的微结构与光致发光性能研究 被引量:1

Micstructure and photoluminescence properties of Nd-doped (Ba,Sr)TiO_3 thin films derived by sol-gel
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摘要 用溶胶-凝胶法制备了不同浓度(0、1%、3%、5%(摩尔分数))的Nd掺杂钛酸锶钡(Ba0.65Sr0.35TiO3,BST)薄膜。XRD结果表明,经700℃退火1h后,样品晶化为完整的多晶钙钛矿结构,平均晶粒尺寸为20nm。原子力显微镜(AFM)观察发现,薄膜表面均匀致密,光滑平整。室温光致发光谱(PL)显示在808nm氩离子激光激发下,Nd掺杂的BST薄膜在876、1060、1337nm处有较强的近红外(NIR)发光,分别对应于Nd3+的4F3/24-I9/24、F3/2-4I11/24、F3/2-4I13/2跃迁。这些结果表明Nd掺杂BST薄膜在激光器和光放大器等光电器件领域有着广泛的应用前景。 Ba0.65Sr0.35TiO3 (BST) thin films with different Nd-doped concentration have been frabracated on silicon substrates by modified sol-gel process. All the samples were annealed at 700℃for 60min. The structural and morphological properties of the films were examined by X-ray diffraction (XRD) and atomic force microscopy (AFM). XRD studies indicated that both pure and doped BST thin films show well-crystallized perovskite structures, the particle size is about 20nm. AFM images display the films have high quality and fine-grained polycrystalline structure. The photoluminescence spectra(PL) were carried out using the 808nm Ar^+ laser line as the excitation source at room temperature. The Nd-doped BST thin films show three NIR luminescence peaks corresponding to ^4F3/2^-4I9/2 transition at 876nm; ^4F3/2^-4I11/2 transition at 1060nm and ^4F3/2^-4I13/z transition at 1337nm respectively. Influence of Nd^3+ concentration to the microstructure and the luminescence properties were discussed. All the results showed that the Nd-doped BST films may have great potential use for novel integrated optic devices.
出处 《功能材料》 EI CAS CSCD 北大核心 2009年第2期194-196,200,共4页 Journal of Functional Materials
基金 国家自然科学基金资助项目(50672022)
关键词 BST薄膜 ND掺杂 微结构 光致发光 BST thin films Nil-doped microstucture photoluminescence
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  • 1丁永平.博士学位论文[M].上海交通大学,2000.. 被引量:1
  • 2M E莱因斯 A M格拉斯 等.铁电体及有关材料的原理和应用[M].应用科学出版社,1989.. 被引量:1
  • 3丁永平,博士学位论文,2000年 被引量:1
  • 4Ding Yongping,J Mater Sci Lett,2000年,19卷,2期,163页 被引量:1
  • 5Chen C L,Appl Phys Lett,1999年,75卷,3期,412页 被引量:1
  • 6Ryen L,J Appl Phys,1999年,85卷,8期,3976页 被引量:1
  • 7Wang Fang,J Mater Res,1998年,13卷,5期,1243页 被引量:1
  • 8莱因斯 M E,铁电体及有关材料的原理和应用,1989年 被引量:1

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