摘要
本文指出采用矩形双岛结构可以实现硅压力传感器的非线性内补偿.用一维近似模型分析计算了矩形双岛结构硅压力传感器硅芯片的应力分布及其与(100)硅各向异性腐蚀深度的关系,指出对已确定了几何尺寸的掩模,可以找到某一最佳腐蚀深度,使这时两对力敏电阻所受横向应力大小与其非线性值成反比.这样总的非线性为零值.通过实验证实了这一结论.
It is indicated in this paper that the innercompensation of nonlinearity can becarried out by using twin rectangular islands structure for silicon pressure sensor. One-di-mensional approximation was adopted in the calculation analysis of stress distribution andits relation with anisotropic etching depth for the twin rectangular islands structure. Thepaper also point out that when the mask size is fixed, an optimal etching depth can befound which makes the value of transverse stress in two pairs of piezoresistors inverselyproportional to the value of their nonlinearity, so that the total nonlinearity is near zero.Experimental results have verified this conclusion.
出处
《传感技术学报》
CAS
CSCD
1998年第1期1-6,共6页
Chinese Journal of Sensors and Actuators
基金
中科院传感技术国家实验室和国家"八五"重点科技攻关721-0l项目的资助
关键词
压力传感器
硅
非线性补偿
pressure sensorsiliconnonlinearity compensation
