摘要
研究了高速射频集成电路(RFIC)中InGaP异质结双极晶体管(HBT)器件的特性。测试了单指发射极和双指发射极两种结构器件的大信号DCI-V特性及抗人体模型(HBM)静电放电(ESD)能力。结果表明,双指发射极器件比单指器件能传导更高密度的电流,并能抵抗高能量的ESD;两种器件的击穿特性相似。这些结果可以用来指导RFIC ESD保护电路的设计。
Robustness of InGaP heterojunction bipolar transistor （HBT） devices in high-speed RF IC was studied. I-V properties of large DC signals of two types of devices, one with single-finger emitter and the other with two-finger emitter, were characterized, and their robustness against ESD stress of human body model （HBM） was tested. Results showed that the device with two-finger emitter could conduct higher-density current and withstand higher level of ESD stress than that with single-finger emitter. However, both devices had similar breakdown behavior. These results are useful for designing ESD protection circuit for RF ICs.
出处
《微电子学》
CAS
CSCD
北大核心
2009年第1期137-140,共4页
Microelectronics
