摘要
以高氢稀释硅烷为反应气源，用PECVD方法淀积了nc－Si：H薄膜。未经任何后处理过程，在低温77K下观察到光致发光，并对薄膜样品进行了Raman散射，红外吸收谱，氢氧含量以及光学吸收系数分析测试。还对nc－Si：H薄膜低温光致发光的机理进行了讨论。
The nc-Si: H films are prepared by using highly diluted silane as thereactive gas in a PECVD system. The photoluminescence on the films is observed at77 K. In addition, the spectra of Raman scattering and the infrared absorption, andthe concentrations of H and O are obtained. The mechanism of photoluminescenceof the film is discussed simply.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1998年第1期38-42,共5页
Research & Progress of SSE
基金
国家自然科学基金
关键词
纳米硅薄膜
光致发光
化学气相渡积
等离子体
Nanon Crystalline
Silicon Film
Photoluminescence
Chemical Vapour Deposition
Plasma
