摘要
研究了一种具有较宽机械调频范围和较低相位噪声的X波段介质振荡器设计方法。利用介质谐振器法对三种型号的介质谐振器(DR)材料进行了精确的测试,得到了其介电常数rε和损耗角正切值tanδ以及DR的谐振频率。利用仿真软件建立微带线与谐振器耦合模型,通过仿真提取其S2P文件。选用GaAs FET ATF26884作为电路中的放大器件,使用生成的S2P文件建立介质振荡器(DRO)电路模型,调整耦合段和输出匹配微带线的长度,得到较低的相位噪声。测试证明输出信号的相位噪声在偏离中心频率100 kHz处小于-100 dBc/Hz。
A method was studied for developing X-band dielectric resonator oscillator with wide mechanically tunable frequency range and low phase noise. The dielectric resonator method was used to accurately measure the permittivity, dielectric loss angle tangent and the resonate frequency of three series of dielectric resonator materials. Simulation software was used to construct the coupling model of microstrip and the DR, and S2P profile was extracted. The DRO circuit was constructed using GaAs FET ATF26884 and S2P profile. Low phase noise was achieved by changing the length of the coupling microstrip and matching microstrip. Test results show that the phase noise （PN） at 100 kHz off the carrier frequency is lower than - 100 dBc/Hz.
出处
《半导体技术》
CAS
CSCD
北大核心
2009年第2期193-196,共4页
Semiconductor Technology
关键词
介质谐振器
谐振法
振荡器
相位噪声
dielectric resonator
resonate method
oscillator
phase noise
