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S-枪溅射NiCr薄膜的Monte Carlo模拟

Monte Carlo Simulation of Sputtering NiCr Thin Film with S-Gun
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摘要 对S-枪溅射NiCr合金薄膜过程采用MonteCarlo法进行了计算模拟.用靶刻蚀图形作为粒子发射频度函数,采用Thompson能量分布,并考虑了环境气体的热运动,得到沉积粒子的能量、入射角度的分布随溅射工艺参数的变化规律. The transport processes of sputtering NiCr alloy thin films with S-gun are studied by computer simulation using Monte Carlo method. The erosion profile of the target is taken as ejection frequency function of sputtered particles. The previous energy distribution of sputtered particles utilizes the Thompson′s formula and the thermalization of particles is taken into account. The results show that energy distribution and incident angular distribution of sputtered particles change with the sputter deposition conditions.
作者 于映 陈跃
出处 《福州大学学报(自然科学版)》 CAS CSCD 1998年第1期29-32,共4页 Journal of Fuzhou University(Natural Science Edition)
关键词 溅射 薄膜 镍铬合金 蒙特卡罗模拟 sputter Monte Carlo simulation thin film NiCr
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