摘要
采用室温固相法,用Mg或Cd掺杂制备了LiMn2O4前驱体,经分步煅烧获得晶型良好的尖晶石型LiM0.2Mn1.8O4(M=Mg,Cd)。结果表明,不同元素掺杂会导致LiMn2O4产生不同程度的晶格畸变。Mg掺杂引起晶格收缩,并导致Mn(Ⅳ)—O和Mn(Ⅲ)—O键能强度增加,对应的红外吸收峰波数增加17.59和2.16cm–1而发生蓝移;Cd掺杂引起晶格膨胀及Mn(Ⅳ)—O和Mn(Ⅲ)—O键能强度降低,对应的红外吸收峰波数均减少2.13cm–1而发生红移。
LiMn2O4 precursors were synthesized by solid-state reaction at room temperature, and then well crystallized spinel LiM0.2Mn1.8O4 （M = Mg, Cd） Was obtained by step calcinations. XRD and infrared spectra analyses show that doping different element can induce lattice distortion of spinel LiMn2O4 at different degree. Mg doping can induce the lattice shrinkage and the increasing of Mn（Ⅳ） -- O and Mn（Ⅲ） -- O bond energy, and the corresponding wave number of infrared absorption peaks increases by 17.59 and 2.16 cm^-1 respectively, which result in the blue shifts; Cd doping can induce the lattice expansion and the decreasing of Mn（Ⅳ） -- O and Mn（Ⅲ） -- O bond energy, and the corresponding wave number of infrared absorption peaks both decreases by 2.13 cm^-1, which result in the red shifts.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2009年第2期20-22,共3页
Electronic Components And Materials
