摘要
本文利用射频磁控溅射方法,在微通道板输入面上成功地制备出二氧化硅防离子反馈膜.通过对二氧化硅防离子反馈膜的电子透过特性测试,给出了特性曲线.利用蒙特卡罗模拟方法对二氧化硅和三氧化二铝两种防离子反馈膜的电子透过和离子阻止能力进行了分析和比较,得出了二氧化硅薄膜比三氧化二铝薄膜对电子的透过特性稍好,而后者比前者对离子的阻止能力较优越的结论.
Silicon oxide ion barrier film was successfully fabricated on the input-face of microchannel plate by magnetron sputtering method. The electron transmission characteristics of silicon oxide ion barrier film were measured and the results were given. The electron-transmission and ion-stopping properties of two different ion barrier films （ silicon oxide and aluminum oxide） were analyzed and compared by Monte Carlo simulation method. The electron-transmission property of silicon oxide thin film is better than that of aluminum oxide thin film and the ion-barrier films is inferior to that of aluminum oxide ion barrier film.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2008年第12期2400-2404,共5页
Acta Electronica Sinica
关键词
微通道板
二氧化硅
防离子反馈膜
蒙特卡罗模拟
microchannel plate
silicon oxide
ion barrier film
monte carlo simulation
