摘要
采用射频磁控溅射在玻璃基片上制备了参数不同的钛膜,并选取钛膜在HF水溶液中恒压阳极氧化得到TiO2纳米管阵列。结果表明:溅射压强从0.1Pa升至1.5Pa,薄膜致密度显著下降,溅射压强以0.5Pa为宜;溅射功率为105W,溅射速率约为0.23nm/s,溅射时间延长,薄膜厚度线性增加;衬底预热有利于提高膜的致密度和结晶性能,在衬底温度低于300℃时,钛晶粒在(002)晶面择优生长,当升温到更高温度时,(010)峰、(011)峰出现且强度升高,而(002)峰的强度降低;在室温下,当溅射功率小于150W时,薄膜具有较高密度,晶粒生长各向异性,增至167W时,钛晶粒在(002)晶面择优生长,呈明显柱状六方晶表面形态,且晶界有明显孔洞存在,致密度下降。将溅射功率为150W,工作压力为0.5Pa,溅射时间为1h条件下所制备的钛膜在氧化电压为10V、电解液为0.5%(质量分数,下同)HF水溶液中室温阳极氧化,得到高规整度的TiO2纳米管阵列。
Ti films were deposited on glass substrates by RF magnetron sputtering at different conditions. Some films were selected to be anodized in HF solution to form highly ordered titania nanotube arrays at constant potential. It is found that the denseness of Ti films decreases obviously with the increasing of sputtering pressure from 0.1 Pa to 1.5 Pa, in which 0.5 Pa is more suitable, while the thickness of the films increase linearly with the sputtering time under the deposition rate of about 0.23 nm/s at the sputtering power （Ps） of 105 W. Moreover, Sabstrate heating can improve the denseness and the crystallinity of the films. The Ti film grows prior at （002） plane when the Ts is lower than 300 ℃. However, the peaks at （010） and （011） planes are getting intense at a higher temperature. The films are compact and the optimization of grain orientation is weak under low sputtering power （Ps 〈150 W） at room temperature. When the Ps is 167 W, the films＇ denseness decreases and the columnar hexagonal crystals appear on its surface, with some holes at the grain boundaries. Ti films with Ps=150 W, Pw=0.5 Pa, t=1 h and Ts=RT （no heating） were selected to be anodized in 0.5wt% HF solution at room temperature to form highly ordered titania nanotube arrays at anodizing voltage of 10 V.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2008年第12期2186-2190,共5页
Rare Metal Materials and Engineering
基金
江苏省自然科学基金(BK2004129)
航空基金(04H52059)
关键词
磁控溅射
钛薄膜
阳极氧化
TIO2纳米管阵列
RF magnetron sputtering
Ti thin films
anodic oxidation
TiO2 nanotube arrays
