摘要
用特征矩阵法研究了窄带缺陷模在入射角缓慢变化中的变化规律。结果表明:随着入射角的缓慢增大,可以使s(或p)偏振光的缺陷模的强度由小变大,再由大变小,缺陷模的波长稍微变短,然后重复前边的变化过程。随着入射角的增大,s偏振光的缺陷模的变化要比而p偏振光的缺陷模的变化快。在一定的入射角下,很小的入射角的变化,就可以改变缺陷模的偏振性。
The change of narrow defect mode Under gradual changes of incident angle is studied by use of eigen matrix. It is discovered that as the incident angle gradually increases, the intensity of narrow defect mode of s （or p） polarized light at first increase, and then decreases. And after that, the wavelength of defect mode becomes slightly shorter. The whole process will be repeated by the increase of incident angle. While the incident angle is being increased, the narrow defect mode of s polarized light changes faster than that of p polarized light. Under certain incident angle, the polarization of defect mode can be changed by a slight change of incident angle.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2008年第6期876-878,883,共4页
Semiconductor Optoelectronics
关键词
一维光子晶体
窄带缺陷模
入射角
透射强度
偏振性
特征矩阵
1D photonic crystal
narrow defect mode
incident angle
transmittance intensity
polarized light
eigen matrix
