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纳米MOS器件RTS噪声测量与分析 被引量:5

Measurement and analysis of RTS noise in nano-MOS devices
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摘要 提出了一种基于虚拟仪器的纳米MOS器件随机电报信号噪声测量方法.应用虚拟仪器平台采集随机电报信号噪声的时间序列,采用逐点差分和高斯函数拟合方法,提取了随机电报信号噪声的相对幅度,再通过数字滤波和指数函数拟合方法提取随机电报信号噪声时常数.通过对90 nm MOS器件的测量分析,结果表明该方法不但计算速度远高于传统方法,而且在相同精度要求下,需要的采样点仅为传统方法的1/10.在随机电报信号时常数较小的情况下,测量精度为传统方法的几倍到几十倍. A virtual-instrument based measurement and analysis method for RTS noise in nano-MOS devices is presented. After a systematic computation of both difference analysis and Gaussian function fitting, and digital filtering and exponential function fitting, the relative amplitudes and time constants of RTS noise are obtained, respectively. Verified by experimental characterization of RTS noise in 90 nm MOSFETs, this new method not only manifests higher efficiency, but also needs just 1/10 sample points of the traditional method under the same requirements of measuring precision.
出处 《西安电子科技大学学报》 EI CAS CSCD 北大核心 2008年第6期1041-1045,共5页 Journal of Xidian University
基金 国家自然科学基金资助(60276028 60676053)
关键词 随机电报信号噪声 噪声测量 虚拟仪器 纳米MOS器件 RTS noise noise measurement virtual-instrument nano-MOS devices
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