摘要
以各部分管道检漏达到低于1×10-10(Pa.m3)/s的SiCCVD为考察对象,通过分析SiC热壁式CVD设备中影响背景掺杂浓度的杂质来源和与之对应的硬件因素,对比在不同的真空条件下得到的外延层背景掺杂浓度变化趋势,并得到最低4×1013cm-3的极低背景掺杂浓度。证明反应腔中的石墨,尤其是多孔石墨中吸附的大量氮气提供了作为背景掺杂的氮元素。定性得到系统整体漏率对背景掺杂无显著影响的结果。
A SiC CVD, which the leak rates of every parts were lower tha 1×10^-10（Pa·m^3）/s, was the research object in this paper. A analysis was done for the relationship of the source of background doping and hardware conditions. We grew some background doping samples under different vacuum levels. A very low background doping was arrived with as low as 4×10^13cm^-3. We proved that the Nitrogen of the background doping is mainly come from the nitrogen-adsorption in graphite parts of cells. We didn＇t found that the total leak rate of system had influence the background doping level.
出处
《电子工业专用设备》
2008年第11期23-26,共4页
Equipment for Electronic Products Manufacturing
