摘要
对在秦山第二核电厂辐射监测系统中使用的两种半导体探测器PIPS(Planar Implanted Passivated Silicon)和SIR的原理、结构、三种应用方式、使用情况进行了介绍和初步研究。
The principle, construction and three ways of application of the two kinds of semiconductors PIPS and SIR which are used at the Qinshan the second nuclear power station has been described in this paper. Summaryed and analyzed the engineering use of these kinds of detector.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2008年第5期898-901,共4页
Nuclear Electronics & Detection Technology
