摘要
This paper introduces a high-revolution,200kHz signal bandwidth EA modulator for low-IF GSM receivers that adopts a 2-1 cascaded single-bit structure to achieve high linearity and stability. Our design is realized in a standard 0.18μm CMOS process with art active area of 0.5mm× 1.1mm.The EA modulator is driven by a single 19.2MHz clock signal and dissipates 5.88mW from 3V power supply. The experimental results show that,with an oversampling ratio of 48, the modulator achieves a 84.4dB dynamic range,73.8dB peak SNDR, and 80dB peak SNR in the signal bandwidth of 200kHz.
介绍了一个200kHz信号带宽、用于低中频结构GSM射频接收机的高精度ΣΔ调制器.为了达到高线性和稳定性,调制器采用2-1级联单比特的结构实现.电路在0.18μmCMOS工艺下流片验证,核心面积为0.5mm×1.1mm.调制器工作在19.2MHz的采样频率,在3V电源电压下功耗为5.88mW.测试结果表明,在200kHz信号带宽,过采样率为64的条件下,调制器达到84.4dB动态范围,峰值SNDR达到73.8dB,峰值SNR达到80dB.
