摘要
A SPICE sub-circuit model is developed for high-voltage LDMOS transistors integrated in PDP driver ICs. The model accounts for intrinsic LDMOS phenomena such as the quasi-saturation effects, voltage-dependent drift resistance, self-heating effects, and Miller capacitance. In contrast to most physical or sub-circuit models, the proposed model not only provides precise simulated results,but also brings a very fast modeling procedure. Furthermore,the model also can be embedded in a commercial SPICE simulator easily. The simulation results using the presented models agree well with the measured ones and the error is less than 5%.
建立了PDP驱动芯片用高压LDMOS的SPICE子电路模型,该模型集成了LDMOS固有特性:准饱和特性、电压控漂移区电阻、自热效应、密勒电容等.与其他物理模型和子电路模型比较,该模型不但能提供准确的模拟结果,而且建模简单快捷,另外该模型可较容易地嵌入SPICE模拟软件中.模型的实际应用结果显示:模拟与实测结果误差在5%以内.
基金
the National High Technology Research and Development Program of China(No.2004AA1Z1060)~~
