摘要
A novel design of all-optical AND gate is proposed by using cross polarization modulation effect in a semiconductor optical amplifier. In this scheme, an additional continuous-wave beam is not required as that in traditional scheme. AND output is obtained on either of two input signal wavelengths. The AND scheme is numerically simulated and experimentally demonstrated at a bit rate of 10 Gb/s successfully.
A novel design of all-optical AND gate is proposed by using cross polarization modulation effect in a semiconductor optical amplifier. In this scheme, an additional continuous-wave beam is not required as that in traditional scheme. AND output is obtained on either of two input signal wavelengths. The AND scheme is numerically simulated and experimentally demonstrated at a bit rate of 10 Gb/s successfully.
基金
Supported by the National Natural Science Foundation of China under Grant No 60520130298.
