摘要
用PECVD法直接沉积的非晶硅(a-Si∶H)薄膜在中温情况下光退火,然后用XRD、Raman光谱和SEM分析,发现晶粒大小随退火温度和退火时间呈现量子态现象。平均晶粒大小为30 nm左右。
Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by rapid thermal annealing （RTA）, from X-ray diffraction （XRD）, micro-Raman scattering and scanning electronic microscope （SEM）, the quantum states in these processions is found and discussed. An average grain size of 30 nm or so is obtained.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2008年第5期1195-1198,共4页
Journal of Synthetic Crystals
