摘要
目的探讨低功率半导体激光预防和治疗羟基磷灰石义眼座(HA)暴露的作用机理。方法24只新西兰白兔,随机分为2组,一组为实验照射组,另一组为对照组,每组又分为4个小组,每小组3只,分别对其右眼行眼球摘除术,将多孔羟基磷灰石(CHA)植入眼眶肌锥腔内,对缝眼外肌,间断缝合筋膜和球结膜,术后2d,对照组用复方新霉素滴眼液滴眼,每天4次,连续7d,实验照射组用JAM-Ⅱ型半导体激光器局部照射,每天1次,每次10min,7d为1个疗程。分别于术后1、2、4、8周处死动物,每组3只,取出CHA球体作病检。结果实验照射组在各个阶段的纤维血管长入CHA球体内的长度及血管化程度明显优于对照组,实验组未发生明显的炎症反应。结论低功率半导体激光对预防和治疗羟基磷灰石义眼座暴露有确切的疗效,其作用机制可能主要为促进CHA的纤维血管化和预防炎症反应。
Objective The experimental research on evaluating the mechanism of semiconductor low level laser irradiation for the treatment and prevent of postoperative exposure of hydroxyapatite orbit implants. Methods Twenty-four New Zenland white rabbits were divided into the experimental group and the control group, and every group was divided into 4 groups, hydroxyapatite orbital spheres were implanted their right orbits. The experimental group was dealed with semiconductor low level laser irradiation for a week（once everyday, 10 min） ;and the control group was dealed with the eyedrops. At the postoperative 1,2,4and 8 weeks the implants were harvested for histoopathological examination. Results Histologie studies demonstrated that postoperatively, the rate of vascularization of the implants dealed with laser irradiation was significantly increased at the whole period in comparism with that of the control group ,and the experimental group had almost not happened inflammation. Conclusion Semiconductor low level laser has affirmative effects for expose of hydroxyapatite orbit implants, it＇s function mechanism is possible to promote the fibrovascular ingrowth into hydroxyapatite orbit implants and prevent the inflammation.
出处
《临床眼科杂志》
2008年第5期467-469,共3页
Journal of Clinical Ophthalmology
基金
江西省卫生厅基金资助(G010507)
关键词
羟基磷灰石
义眼座
激光
Hydroxyapatite orbital implant
Semiconductor
Laser
