摘要
氢氧化钾溶液腐蚀硅尖具有易于实现、设备简单、优异的纵向腐蚀均匀性等优点,但腐蚀均匀性差、纵向和横向腐蚀速率之比低、针形为不对称的八棱锥。通过在KOH溶液中添加过饱和的碘单质(I2),显著减小了快腐蚀面的削角速率,在较小的掩膜下腐蚀出高的硅尖。更为重要的是该腐蚀液腐蚀的硅尖异于常规的不对称八棱锥,而是一种半锥角很小的"火箭尖"形状,因此可望获得更好的扫描特性和隧道效应。
Etching silicon tips in anisotropic KOH solution is simple, easy to handle, low cost and homogeneous etching rate of （100） crystal plane on a whole wafer. Unfortunately the homogeneity of undercutting silicon tips is bad, and the etching ratio of （100） crystal plane to that of undercutting rate is small. In addition, the figure of silicon tips etched in KOH solution is unsymmetrical eight si- ded pyramid. In this paper, the undercutting rate of silicon tips are improved by adding supersaturated iodine and KI in KOH solution. The figure of silicon tips etched in this novel etching solution is rocket tips on right rectangular pyramid rather than unsymmetrical eight sided pyramid etched in other etch- ing solution. As a result, good characteristic of scanning and tunneling can be achieved by using silicon tips etched in the iodine-supersaturated KOH solution.
出处
《材料工程》
EI
CAS
CSCD
北大核心
2008年第10期92-94,97,共4页
Journal of Materials Engineering
基金
国家自然科学基金(60772008)
中国计量学院123人才计划项目的资助
