摘要
提出了一种基于MOSFET反型系数(Inversion Coefficient)且适合于MOSFET工作在任何反型区的模拟集成电路的设计方法。对于一定工艺的深亚微米模拟集成电路,结合查表法进行的手工估算值与仿真值的误差可控制在±10%左右。该方法尤其适用于低压、低功耗设计。
A new analog IC design methodology was presented based on inversion coefficient of MOSFET, which was suitable for all operation regions of MOSFET. For certain deep submicron analog IC, the difference of values estimated by manual calculation based on the look-up-table method from those computed by simulation can be controlled to about ±10%. It is specifically aimed at designing low-voltage/low-power CMOS analog ICs.
出处
《微电子学》
CAS
CSCD
北大核心
2008年第5期656-659,678,共5页
Microelectronics
