摘要
采用RF-PECVD技术,在玻璃衬底上低温沉积了优质微晶硅薄膜,并深入研究了硅烷浓度对微晶硅薄膜微结构及电学性质的影响。研究结果表明,微晶硅薄膜的沉积速率、平均晶粒尺寸、晶化率和电导率均呈现相似的变化规律,而谱中出现的拐点由硅烷浓度决定。该变化规律可通过相应的薄膜生长的微观理论得到合理的解释。
High-quality microcrystalline silicon films were deposited on glass substrate by RF-PECVD at low temperature. The influence of silane concentration on the microstructural and electrical properties of the films were studied in depth. Experimental results revealed that the deposition rate, average grain size, crystallization rate and electrical conductivity all change similarly and that the inflection point appearing in spectra depends on the silane concentration. Such similar changes can be accounted for the microscopic theory of thin film growth.
出处
《真空》
CAS
北大核心
2008年第5期62-64,共3页
Vacuum
基金
国家"973"课题(编号:2006CB202601)资助。
关键词
微晶硅薄膜
硅烷浓度
晶化率
Raman散射谱
microcrystalline silicon film
silane concentration
crystallization rate
Raman spectrum
