摘要
本文针对n型硅单晶,在常温下进行霍尔效应实验,研究了霍尔系数与压缩应力的关系。研究结果表明,样品的霍尔系数绝对值随着作用于样品压缩应力的增加而减少。应力增加一个数量级,霍尔系数绝对值的相对变化小于10%。其与应力的变化关系似乎不是完整的线性关系。在应力方向和电流方向沿〈111〉晶向时,沿不同晶向加磁场,霍尔系数的变化情形几乎没有多大改变。本文还对实验结果作了理论上的定性解释。
In this paper,the Hall effect experiments have been tested andthe relationship between the Hall coefficient and compressive stresshas been studied in the N-type silicon crystal at room temperature.The study result shows that the Hall coefficient(absolute value)of n-Si samples will decrease with the increase of compressive stress.When the stress increases with an order of magnitude,the relativechanges of Hall coefficient are less than 10%.It seems that thelinear relationship is not thorough.When the stress direction andthe curent direction are parallel to<lll>,and the magnetic fielddirection is along different crgstal directions,the relationship isalmost not varied.The qualitative analysis of experimental result hasalso been made in this paper.
出处
《华南理工大学学报（自然科学版）》
EI
CAS
CSCD
1990年第4期82-88,共7页
Journal of South China University of Technology(Natural Science Edition)
