摘要
通过对接近式光刻中光通过掩模版后的近场衍射特性的计算机模拟分析和曝光实验，提出了一种新型的接近式衍射缩小曝光方法，适用于紫外和Ｘ射线的接近式曝光。利用此方法，采用间隙在一定范围内可调的通用接近式曝光机，可在接近式曝光技术条件下，实现缩小曝光，可使实现亚半微米线宽图形的曝光和使其掩模版制作更为容易；并且具有等量缩小和焦深大的特点。
Based on the computer simulation analysis and exposure experiments for the near field diffractive characteristics when the light passing through mask in proximity lithography,a novel proximity diffractive reduction exposure method is proposed in the paper.The method is suitable for UV and X ray proximity lithography.By use of the method,the reduction exposure can be realized under the proximity exposure conditions using the common proximity lithography with adjustable gap in certain range.Thus the fabrication of sub half micrometer pattern and mask can be easily carried out.The method has the advatages of equal reduction and large focal depth.
出处
《光电工程》
EI
CAS
CSCD
1997年第4期21-25,共5页
Opto-Electronic Engineering
基金
中国科学院光电技术研究所微细加工光学技术国家重点实验室资助
关键词
接近式
衍射
缩小曝光
光刻技术
Proximity lithography,Diffractive characteristic,Reduction lithography.
