摘要
建立一维半导体Ge的激光烧蚀模型,对波长为248nm,脉宽为17ns,峰值功率密度为4×108w/cm2的KrF脉冲激光在1000torr(1torr=133.32pa)氦气环境下烧蚀晶体Ge及产生等离子体的过程进行了数值模拟,并对计算结果进行分析比较。结果表明在惰性气体环境下,气压在1torr和1000torr之间变化对等离子体屏蔽现象的出现几乎不产生影响;背景气压的增大抑制了粒子的扩散,使等离子体的膨胀速度减小,限制了其膨胀的空间。
One-dimensional dynamic semiconductor model was presented for the laser ablation of Ge crystal in a background gas （He） at 133320 Pa and the characteristics of plasma induced by Gaussian- shaped KrF laser pulse with wavelength of 248nm, pulse width of 17ns, and peak power of w/cm^2. The results show that in the background of inert gas existing ambient, the plasma shielding depends lightly on the change of ambient pressure between 133.3pa and velocity and plume length decrease with the increase of 133320pa. However, the ablated plume expansion gas pressure.
出处
《黄山学院学报》
2008年第3期27-30,共4页
Journal of Huangshan University
基金
黄山学院科研基金资助项目(2007xkjq005)
