摘要
提出了一种先进的ICP Si深槽刻蚀工艺。在"Bosch"工艺的基础上加以改进,以SF6/O2作为刻蚀气体,C4F8作为侧壁钝化气体,通过在刻蚀过程中引入少量的O2,使得在刻蚀Si深槽过程中侧壁形成由氧离子辐照产生的SiO2薄膜和CFx聚合物淀积产生的双层保护层,强烈保护Si槽侧壁不被刻蚀,保证了良好的各向异性刻蚀。同时,通过优化刻蚀和钝化的时间周期,进一步提高了刻蚀后Si槽的陡直度和平滑的侧壁效果。采用这种工艺技术可制作出满足台面晶体管、高性能梳状沟槽基区晶体管需要的无损伤、平滑陡直的Si槽侧壁形貌。
An advanced silicon deep trench etching technology based on inductively-coupled plasma （ICP） was proposed. SF6/O2 and C4F8 served as reaction and sidewall passivation gas respectively, double side-wall protection films composed of polymer CFx and SiO2 can be formed during silicon deep trench etching by adding a little 02. It can prevent the side-wall from etching and ensure the etching nonisotropically. The smooth side-wall and steep profile can be obtained by varying factors and technology parameters. This technology can be used for manufacturing mesa transistors and high performance interdigitated trench base transistors.
出处
《微纳电子技术》
CAS
2008年第8期480-483,共4页
Micronanoelectronic Technology
