摘要
采用微加工技术制作测辐射热计阵列时,部分微桥可能发生结构变形,使阵列的性能下降甚至无法正常工作。采用有限元分析方法,对在热膨胀和薄膜应力影响下的I型和L型两种微桥的变形进行了仿真分析,揭示了热膨胀和薄膜应力分别对微桥形变的影响。
When arrays of bolometers are fabricated with micro-manufacture technology, some micro-bridges will get deformation, which degrades the performance of arrays, even makes them work unnormally. In this article, we analyse I type and L type micro-bridge by using finite elements method, indicate the relationship between the thermal expansion and film stress and the change of the shape of micro-bridges.
出处
《红外技术》
CSCD
北大核心
2008年第9期516-519,523,共5页
Infrared Technology
关键词
微桥结构
结构形变
热膨胀
薄膜应力
有限元分析
micro-bridge
deformation
thermal expansion： film stress~ finite elementsanalysis
