摘要
采用光致发光（Photoluminescence，PL）谱的测量，研究了10^13-10^17cm^-2。的O和C两种离子注入和退火对非有意掺杂的n型GaN黄光发射（Yellow luminescence，YL）的影响，注入后的样品在流动N2的保护下进行退火，退火温度950℃，退火时间30min。对比相同剂量下N离子注入GaN黄光发射，结果表明O、C两种离子的注入在GaN中分别引入了与黄光发射相关的不同的深能级中心，当C离子注入剂量高达10^17cm^-2时，能引起黄光发射的C相关的深能级中心显著增多。
The effects of O and C ion implantation with different implantation doses on the yellow luminescence （YL） from unintentional doped n-type GaN have been studied by the photoluminescence （PL） spectra. O and C ions were implanted in the GaN samples with different doses from 1.0×10^13 to 1.0×10^17cm^-2. Post-annealing was done in a quartz open-tube furnace under flowing N2 gas for 30 rain at 950℃. By comparing with N ion implanted samples, it is assumed that different deep-level centers involving in the YL were produced in GaN after O and C ion implantation In addition, with a dose of 1017 cm^2, the concentration of deep C centers involving in the YL was enhanced markedly.
出处
《核技术》
EI
CAS
CSCD
北大核心
2008年第8期595-599,共5页
Nuclear Techniques
基金
国家自然科学基金(10605011)资助
